Temperature induced enhancement of the exciton binding energy in nitride quantum structures

Physica Status Solidi (A) Applied Research

Volumn 183, Issue 1, 2001, Pages 125-128

  Bigenwald, P ^a   Gil, B ^b   Kavokin, A ^c   Christol, P ^a  

^a UNIVERSITY OF AVIGNON   (France)

^b CNRS   (France)

^c UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CARRIER MOBILITY; EXCITONS; GALLIUM NITRIDE; MATHEMATICAL MODELS; POISSON EQUATION; THERMAL EFFECTS;

ALUMINUM GALLIUM NITRIDE; ELECTRON HOLE INTERACTION; SCHRODINGER EQUATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035126356     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200101)183:1<125::AID-PSSA125>3.0.CO;2-8     Document Type: Article

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