Growth of 3C-SiC on Si by low temperature CVD

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 159-162

  Cloitre, T ^a   Moreaud, N ^a   Vicente, P ^a,b   Sadowski, M L ^a   Aulombard, R L ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b SAVOIE TECHNOLAC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBONIZATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; MORPHOLOGY; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SURFACES; X RAY DIFFRACTION ANALYSIS;

HETEROEPITAXY; INTERFACIAL VOIDS; PRECURSOR GASES;

SILICON CARBIDE;

EID: 0035126226     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.159     Document Type: Article

References (4)

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4. M.L. Sadowski, M. Grynberg, A.M. Witowski, S. Huant and G. Martinez, Phys. Rev. B 60 (1999), 10908.