Time-of-flight secondary ion mass spectrometry depth profiling of multiple quantum well II-VI semiconductors using negative cluster ions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 1, 1999, Pages 224-229

  Zhao, Jin ^a  

^a UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NEGATIVE IONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SPUTTERING;

DEPTH PROFILING; KNOCK ON EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032621731     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590543     Document Type: Article

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