Modeling and estimation of FPN components in CMOS image sensors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3301, Issue , 1998, Pages 168-177

  El Gamal, Abbas ^a   Fowler, Boyd ^a   Min, Hao ^a   Liu, Xinqiao ^a  

^a Stanford University   (United States)

Author keywords

CMOS image sensor; Fixed pattern noise; Image sensor characterization; Nonuniformity

Indexed keywords

CHARACTERIZATION; CMOS INTEGRATED CIRCUITS; GAIN MEASUREMENT; LIGHTING; PARAMETER ESTIMATION; RANDOM PROCESSES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; STATISTICAL OPTICS; WHITE NOISE;

ACTIVE PIXEL SENSOR; CORRELATED DOUBLE SAMPLING; FIXED PATTERN NOISE; ISOTROPIC AUTOREGRESSIVE RANDOM PROCESS; PASSIVE PIXEL SENSOR;

IMAGE SENSORS;

EID: 0032224760     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304560     Document Type: Conference Paper

References (3)

1. Charge-coupled-device response to electron beam energies of less than 1 keV up to 20 keV
2. Test structures for characterization and comparative analysis of CMOS image sensors
3. A method for estimating quantum efficiency for CMOS image sensors