Nitridation of thermal SiO2 films by radio-frequency plasma assisted electron cyclotron resonance: layer structure and composition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 19, Issue 1, 2001, Pages 17-24

  Raveh, A ^a  

^a University of North Carolina at Chapel Hill   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; COMPOSITION; ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); NITRIDING; NITROGEN; PLASMAS; SILICA; THERMODYNAMIC STABILITY;

PLASMA MODE; RADIO FREQUENCY DISCHARGE; RADIO FREQUENCY PLASMA ASSISTED ELECTRON CYCLOTRON RESONANCE; SILICA FILMS; SILICON OXYNITRIDE;

SEMICONDUCTING FILMS;

EID: 0035105043     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1333084     Document Type: Article

References (2)

1. W. L. Hill, E. M. Vogel, V. Misra, P. K. McLarty, and J. J. Wortman, IEEE Trans. Electron Devices 43, 15 (1996).
2. T. Arakawa, T. Hayashi, M. Ohno, R. Matsumoto, A. Uchiyama, and H. Fukuda, Jpn. J. Appl. Phys., Part l 34, 1007 (1995).