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Volumn 13, Issue 1, 2001, Pages 37-39

Low-crosstalk penalty MZI space switch with a 0.64-mm phase shifter using quantum-well electrorefraction

Author keywords

[No Author keywords available]

Indexed keywords

CROSSTALK; ELECTROOPTICAL DEVICES; ENERGY GAP; INDIUM COMPOUNDS; INTERFEROMETERS; PHASE SHIFTERS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SWITCHES;

EID: 0035085850     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.903213     Document Type: Article
Times cited : (5)

References (7)
  • 3
    • 0027004035 scopus 로고
    • Strained quantum wells for polarization-independent electrooptic waveguide switches
    • Dec.
    • J. E. Zucker, K. L. Jones, T. H. Chiu, B. Tell, and K. Brown Goebeler, "Strained quantum wells for polarization-independent electrooptic waveguide switches," J. Lightwave Technol., vol. 10, pp. 1926-1930, Dec. 1992.
    • (1992) J. Lightwave Technol. , vol.10 , pp. 1926-1930
    • Zucker, J.E.1    Jones, K.L.2    Chiu, T.H.3    Tell, B.4    Brown Goebeler, K.5
  • 5
    • 36149018783 scopus 로고
    • Absorption edge of impure gallium arsenide
    • J. I. Pankove, "Absorption edge of impure gallium arsenide," Phys. Rev., vol. 140, p. A2059, 1965.
    • (1965) Phys. Rev. , vol.140
    • Pankove, J.I.1
  • 6
    • 0004186192 scopus 로고    scopus 로고
    • Electrorefraction in strained InGaAs/InP chopped quantum wells: Significance of the interface layers
    • B. H. P. Dorren, A. Yu. Silov, M. R. Leys, J. E. M. Haverkort, and J. H. Wolter, "Electrorefraction in strained InGaAs/InP chopped quantum wells: Significance of the interface layers," J. Appl. Phys., vol. 87, no. 5, pp. 2331-2335, 2000.
    • (2000) J. Appl. Phys. , vol.87 , Issue.5 , pp. 2331-2335
    • Dorren, B.H.P.1    Silov, A.Yu.2    Leys, M.R.3    Haverkort, J.E.M.4    Wolter, J.H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.