Non-Langevin recombination in disordered materials with random potential distributions

Solid State Communications

Volumn 103, Issue 9, 1997, Pages 541-543

  Adriaenssens, G J ^a   Arkhipov, V I ^a,b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

Author keywords

A. disordered systems; A. semiconductors; D. electronic states (localized); D. recombination and trapping

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS;

DISORDERED SYSTEMS; NON LANGEVIN RECOMBINATION;

SEMICONDUCTOR MATERIALS;

EID: 0031236901     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00233-0     Document Type: Article

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