Improvement of channel mobility for trench metal-oxide-semiconductor field effect transistor by smoothing trench sidewall surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 1, 2001, Pages 116-117

  Yahata, A ^a   Urano, S ^a   Inoue, T ^a   Shinohe, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Atomic force microscopy; Channel mobility; Chemical dry etching; Smoothness; Split C V; Trench MOS

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; ELECTRIC FIELD EFFECTS; SURFACE ROUGHNESS;

CHANNEL MOBILITY; TRENCH SIDEWALL SURFACE;

MOSFET DEVICES;

EID: 0035059542     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.40.116     Document Type: Article

References (8)