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Volumn 35, Issue 1-4, 2001, Pages

Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films grown by MOCVD

(14) Baumann, P K a Streiffer, S K a Bai, G R a Ghosh, K a Auciello, O a Thompson, C a,b Stemmer, S c Rao, R A d Eom, C B e Xu, F e Trolier Mckinstry, S e Kim, D J f Maria, J P f Kingon, A I f

a ARGONNE NATIONAL LABORATORY (United States)

b NORTHERN ILLINOIS UNIVERSITY (United States)

c Rice University (United States)

d Duke University (United States)

e PENNSYLVANIA STATE UNIVERSITY (United States)

f North Carolina State University (United States)

Author keywords

Impurity phases; MOCVD; Piezoelectric properties; PMN PT

Indexed keywords

EPITAXIAL GROWTH; HYSTERESIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PIEZOELECTRICITY; SEMICONDUCTING LEAD COMPOUNDS; STRONTIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS; TITANIUM;

IMPURITY PHASES; POLARIZATION HYSTERESIS; ZERO-BIAS DIELECTRIC LOSS; ZERO-BIAS PERMITTIVITY;

THIN FILMS;

EID: 0035041687 PISSN: 10584587 EISSN: None Source Type: Journal
DOI: 10.1080/10584580108016896 Document Type: Conference Paper

Times cited : (4)

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