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Volumn 43, Issue 4, 2001, Pages 117-122
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Microhardness testing of GaAs single crystals;Mikro- und ultramikrohärte-prüfung an GaAs-einkristallen
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NONE
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPOSITION EFFECTS;
CRACKS;
DEFORMATION;
DOPING (ADDITIVES);
ELASTICITY;
FRACTURE TOUGHNESS;
HARDNESS TESTING;
MICROHARDNESS;
RESIDUAL STRESSES;
ULTRASONIC MEASUREMENT;
GALLIUM ARSENIDE;
III-V SEMICONDUCTORS;
SEMICONDUCTING GALLIUM;
SINGLE CRYSTALS;
ULTRASONIC APPLICATIONS;
CRACKING;
CRITICAL LOAD;
RADIAL CRACKING;
ULTRASONIC TIME OF FLIGHT MEASUREMENTS;
VICKERS INDENTATION TECHNIQUE;
SEMICONDUCTING GALLIUM ARSENIDE;
INDENTATION;
CRITICAL LOAD;
EFFECT OF DOPING;
ELASTIC PROPERTIES;
LOAD DEPENDENCE;
MICROHARDNESS , FRACTURE TOUGHNESS;
MICROHARDNESS TESTING;
ULTRASONIC TIME OF FLIGHTS;
VICKERS INDENTATION TECHNIQUE;
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EID: 0035040512
PISSN: 00255300
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
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Times cited : (8)
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References (12)
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