Ferroelectric properties of epitaxial barium titanate thin film capacitors on silicon substrate

Integrated Ferroelectrics

Volumn 33, Issue 1-4, 2001, Pages 281-290

  Abe, K ^a   Yanase, N ^a   Yasumoto, T ^a   Ohara, R ^a   Sano, K ^a   Fukushima, N ^a   Kawakubo, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Epitaxial films; Ferroelectric capacitors; Lattice misfit strain

Indexed keywords

BARIUM COMPOUNDS; DEPOSITION; FERROELECTRICITY; MAGNETRON SPUTTERING; REMANENCE; SILICON; TEMPERATURE; THICKNESS MEASUREMENT; THIN FILMS;

FERROELECTRIC CAPACITORS; FERROELECTRIC NONVOLATILE MEMORY APPLICATIONS; LATTICE MISFIT STRAIN; NEGATIVE VOLTAGE PULSES;

FERROELECTRIC DEVICES;

EID: 0035032128     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584580108222310     Document Type: Conference Paper

References (19)