A study on the effect of beam blur in mask fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4186, Issue , 2001, Pages 468-473

  Yang, S H ^a   Ki, W T ^a   Moon, S Y ^a   Jeong, T M ^a   Choi, S W ^a   Han, W S ^a   Sohn, J M ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Beam blur; Beam current; Coulomb interaction effect; Process latitude

Indexed keywords

ELECTRIC CURRENTS; ELECTRON BEAMS; IMAGING TECHNIQUES; OPTICAL RESOLVING POWER; SCANNING; SCANNING ELECTRON MICROSCOPY;

BEAM CURRENTS; COULOMB INTERACTION EFFECT;

MASKS;

EID: 0035030006     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.410725     Document Type: Conference Paper

References (8)

1. Analysis of the performance limitations for Coulomb interaction in maskless parallel electron beam lithography systems
2. Impact of the Coulomb interaction effect on delineating densely repeated 0.1 μn patterns using electron beam block exposure
3. Space-charge Limitations to Throughput in Projection Electron-Beam Lithography(SCALPEL)
4. Electron-optics method for high-throughput in a SCALPEL system: Preliminary analysis
5. Masks for SCALPEL tool optics optimization
6. Writing-strategy for a high-throughput SCALPEL system
7. Quantitative factor analysis of resolution limit in electron beam lithography using the edge roughness evaluation method
8. 130-nm KrF lithography for DRAM production with 0.68-NA scanner