A study of vacancy-like defects in the chalcopyrite semiconductor AglnSe2

Materials Science Forum

Volumn 363-365, Issue , 2001, Pages 150-152

  Al Kotb, M S ^a   Puff, W ^b   Hassan, S A ^a   Mohsen, M ^a  

^a Ain Shams University   (Egypt)

^b GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Chalcopyrite semiconductors; Point defects

Indexed keywords

ACTIVATION ENERGY; COMPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; HALL EFFECT; MELTING; PHOTOLUMINESCENCE; POINT DEFECTS; STOICHIOMETRY; X RAY POWDER DIFFRACTION;

CHALCOPYRITE SEMICONDUCTORS; HALL MEASUREMENT; PHOTOLUMINESCENCE MEASUREMENT; POSITRON MEASUREMENT;

SEMICONDUCTING SILVER COMPOUNDS;

EID: 0035015727     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (4)

1. J. A. Groenink and P. H. Janse, Zeit. Physik. Chem., 110 (1978), p. 17.
2. M. S. Al-Kotb, W. Puff, and G. Bischof, Mater. Sci. Forum 258-263 (1997), p. 1461.
3. K. Hjelt, J. Krustok, M. Ykushev, H. Collan, A. Hill, and R.D. Tomlinson, Inst. Phys. Conf. Ser. No. 152 (1997), p. 441.
4. R. Krause-Rehberg and H.S. Leipner, Positron Annihilation in Semiconductors, Springer (1999)