A positron lifetime study of lattice defects in chalcopyrite semiconductors

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1461-1466

  Al Kotb, M Sherif ^a,c   Puff, Werner ^a   Bischof, G ^b  

^a GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^b UNIVERSITY OF VIENNA   (Austria)

^c Ain Shams University   (Egypt)

Author keywords

Chalcopyrite Semiconductors; Positron Lifetime

Indexed keywords

APPROXIMATION THEORY; COMPUTATIONAL METHODS; CRYSTAL GROWTH; CRYSTAL LATTICES; DOPPLER EFFECT; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILVER COMPOUNDS; SOLIDIFICATION; SYNTHESIS (CHEMICAL); X RAY CRYSTALLOGRAPHY;

CHALCOPYRITE; DIRECT FUSION TECHNIQUE; GENERALIZED GRADIENT APPROXIMATION (GGA); LOCAL DENSITY APPROXIMATION (LDA); POSITRON LIFETIME SPECTROSCOPY; RIETVELD REFINEMENT;

SEMICONDUCTOR MATERIALS;

EID: 0031361962     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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