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Volumn 363-365, Issue , 2001, Pages 463-465

Annealing effects in hydrogenated amorphous silicon layers

(9) Hempel, A a Dabrowski, A a Harting M a Hempel, M a Knoesen, D b Bauer Kugelmann, W c Kogel G c Triftshauser W c Britton, D T a

a UNIVERSITY OF CAPE TOWN (South Africa)

b UNIVERSITY OF THE WESTERN CAPE (South Africa)

c BUNDESWEHR UNIVERSITY MUNICH (Germany)

Author keywords

Crystallisation; Electron momentum; Hydrogenated amorphous silicon; Positron lifetime; X ray diffraction

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALLIZATION; HYDROGENATION; POSITRONS; X RAY DIFFRACTION ANALYSIS;

DOPPLER BROADENING MEASUREMENTS; ELECTRON MOMENTUM; HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGENATED AMORPHOUS SILICON; POSITRON LIFETIME;

AMORPHOUS SILICON;

EID: 0035010354 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.363-365.463 Document Type: Conference Paper

Times cited : (2)

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