Evaluation of thick silicon dioxides grown on trench MOS gate structures

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 79-82

  Nakamura, Katsumi ^a   Minato, Tadaharu ^a   Takahashi, Tetsuo ^a   Nakamura, Hideki ^a   Harada, Masana ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC PROPERTIES OF SOLIDS; DRY ETCHING; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; THICK FILMS;

TRENCH MOS GATE POWER DEVICES;

POWER ELECTRONICS;

EID: 0029713198     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)