N-channel versus P-channel flas EEPROM-which one has better reliabilities

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2001, Pages 67-72

  Chung, S S ^a   Liaw, S T ^a   Yih, C M ^a   Ho, Z H ^a   Lin, C J ^a   Kuo, D S ^a   Liang, M S ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; ELECTRIC POWER SUPPLIES TO APPARATUS; FLASH MEMORY; PROM;

HOT CARRIER REALIBILITY; N-CHANNEL FLASH CELL; P-CHANNEL FLASH CELL;

RELIABILITY;

EID: 0034995212     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)