Impurity-induced photoconductivity in gallium-doped Pb1-xGexTe alloys

Physica B: Condensed Matter

Volumn 302-303, Issue , 2001, Pages 393-397

  Skipetrov, Evgeniy ^a   Zvereva, Elena ^a   Skipetrova, Lyudmila ^a   Slyn'ko, Evgeniy ^b  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

Author keywords

Defect states; Narrow gap semiconductors; Photoconductivity kinetics

Indexed keywords

ELECTRON TRANSITIONS; IMPURITIES; INFRARED RADIATION; PHASE TRANSITIONS; PHOTOCONDUCTIVITY; REACTION KINETICS; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING;

NARROW-GAP SEMICONDUCTORS; PHOTOCONDUCTIVITY KINETICS;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 0034967732     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00460-4     Document Type: Conference Paper

References (7)