Gallium-induced defect states in Pb1-xGexTe alloys

Journal of Crystal Growth

Volumn 210, Issue 1, 2000, Pages 292-295

  Skipetrov, E P ^a   Zvereva, E A ^a   Skipetrova, L A ^a   Belousov, V V ^b   Mousalitin, A M ^b  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON IRRADIATION; GALLIUM; HALL EFFECT; RADIATION EFFECTS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

LEAD TELLURIDE;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 0033873515     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00699-5     Document Type: Article

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