Elastic and drift-diffusion limits of electron-phonon interaction in semiconductors

Mathematical Models and Methods in Applied Sciences

Volumn 8, Issue 1, 1998, Pages 37-53

  Schmeiser, Christian ^a   Zwirchmayr, Alexander ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032384696     PISSN: 02182025     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0218202598000032     Document Type: Article

References (8)

1. N. Ben Abdallah and P. Degond, On a hierarchy of macroscopic models for semiconductors, preprint, Université Paul Sabatier, Toulouse, 1995.
2. P. Dmitruk, A. Saul and L. Reyna, High electric field approximation to charge transporet in semiconductor devices, Appl. Math. Lett. 5 (1992) 99-102.
3. A. Majorana, Space homogeneous solutions of the Boltzmann equation describing electron-phonon interactions in semiconductors, Transport Theory Statist. Phys. 20 (1991) 261-279.
4. 2 AN 29 (1995) 857-869.
5. P. A. Markowich, C. Ringhofer and C. Schmeiser, Semiconductor Equations (Springer-Verlag, 1990).
6. P. A. Markowich and C. Schmeiser, Relaxation approximation for electron-phonon interaction in semiconductors, Math. Models Methods Appl. Sci. 5 (1995) 519-527.
7. P. A. Markowich and C. Schmeiser, The drift-diffusion limit for electron-phonon interaction in semiconductors, to appear in Asymptotic Anal., 1996.
8. C. Schmeiser and A. Zwirchmayr, A drift-diffusion model for almost elastic electron-phonon interaction in semiconductors, manuscript, TU Wien, 1996.