Spark-source mass spectrometric assessment of silicon concentrations in silicon-doped gallium arsenide single crystals

Fresenius' Journal of Analytical Chemistry

Volumn 370, Issue 5, 2001, Pages 541-543

  Wiedemann, B ^a   Meyer, J D ^a   Jockel, D ^b   Freyhardt, H C ^b   Birkmann, B ^c   Muller G ^c  

^a GOETHE UNIVERSITY   (Germany)

^b Zentrum für Funktionswerkstoffe GmbH   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034921825     PISSN: 09370633     EISSN: None     Source Type: Journal    
DOI: 10.1007/s002160100800     Document Type: Conference Paper

References (7)

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2. Wiedemann B, Markwitz A, Waldschmidt M, Bethge K, Wolf G, Schuetze W (1988) In: Longevialle P (ed) Proc 11th Int Mass Spectrometry Conf, Vol 11B. Heyden and Son, Bordeaux, pp 1716-1717
3. Wiedemann B, Bethge K, Venzago C, Kessler Th, Wolf G, Schuetze W, Waldschmidt M, Dietze HJ, Becker JS (1991) Book of Abstracts of the 12th Int Mass Spectrometry Conf, Amsterdam, p 333
4. ASTM F76 (1999) Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors, Annual Book of ASTM Standards, Vol. 10.05
5. Handbook of Crystal Growth (1993) Fundamentals (Vol 1A and IB), Bulk Crystal Growth (Vol 2A and 2B), Thin Films and Epitaxy (Vol 3A and 3B), Hurle DTJ (ed), North Holland, Amsterdam, London, New York, Tokyo
6. Hurle DTJ (1999) J Appl Phys Rev 85:10
7. Althaus M, Industrierelevante Entwicklungen der Vertikalen Bridgman-Methode zur Herstellung von versetzungsarmen Galliumarsenid (1996) Forschungszentrum Jülich, Forschungsbericht Jül-3252