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Volumn 4276, Issue , 2001, Pages 57-61

Simulation of picosecond pulsed laser ablation of silicon: The molecular-dynamics thermal-annealing model

Author keywords

Laser ablation; Molecular dynamics; Silicon; Subsurface superheating effects; Thermal annealing model

Indexed keywords

ANNEALING; DIFFUSION; LASER ABLATION; MOLECULAR DYNAMICS; PHOTONS; PULSED LASER APPLICATIONS; SCATTERING;

EID: 0034874913     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.428006     Document Type: Conference Paper
Times cited : (6)

References (21)
  • 2
  • 13
    • 0020113278 scopus 로고
    • Computer modeling of the temperature rise and carrier concentration induced in silicon by nanosecond laser pulses
    • (1982) J. Appl. Phys. , vol.53 , pp. 3207-3213
    • Lietoila, A.1    Gibbons, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.