A 5.7 GHz hiperlan SiGe BiCMOS voltage-controlled oscillator and phase-locked-loop frequency synthesizer

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2001, Pages 61-64

  Klepser, B U H ^a   Scholz, M ^a   Kucera, J J ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY SYNTHESIZERS; PHASE LOCKED LOOPS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; VARIABLE FREQUENCY OSCILLATORS;

HIPERLAN FREQUENCY SYNTHESIZER; PHASE LOCKED LOOP CIRCUIT; SEMICONDUCTING SILICON GERMANIUM;

CMOS INTEGRATED CIRCUITS;

EID: 0034863275     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Ramp-up of first SiGe circuits for mobile communications: Positioning of SiGe vs. GaAs and silicon
2. A fully integrated SiGe bipolar 2.4 GHz bluetooth VCO
3. SiGe bipolar 5.5 GHz dual-modulus prescaler
4. A fully integrated 5-GHz frequency synthesizer in SiGe BiCMOS
5. A 5GHz, 32mW CMOS frequency synthesizer with an injection locked frequency divider
6. Fully-monolithic 3V SiGe differential voltage-controlled oscillators for 5GHz and 17GHz wireless applications