Process monitoring and defect characterization of single photon avalanche diodes

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2001, Pages 165-170

  Jackson, J C ^a   Morrison, A P ^a   Hurley, P ^a   Harrell, W R ^a   Damjanovic, D ^a   Lane, B ^a   Mathewson, A ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CMOS INTEGRATED CIRCUITS; DEFECTS; ELECTRON DEVICE TESTING; HETEROJUNCTIONS; PRODUCT DESIGN; SEMICONDUCTING SILICON;

DEFECT CHARACTERIZATION; GEINGER MODE; SINGLE PHOTON AVALANCHE DIODES;

SEMICONDUCTOR DIODES;

EID: 0034860731     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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5. Multiplication noise in uniform avalanche diodes
6. On the avalanche initiation probability of avalanche diodes above the breakdown voltage
7. Triggering phenomena in avalanche diodes
8. Accurate extraction of the diffusion current in silicon p-n junction diodes