A new and accurate quantum mechanical compact model for NMOS gate capacitance

Annual Device Research Conference Digest

Volumn , Issue , 2001, Pages 87-88

  Mudanai, S ^a   Register, L F ^a   Tasch, A F ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DOPING (ADDITIVES); FERMI LEVEL; GATES (TRANSISTOR); GROUND STATE; POISSON EQUATION; QUANTUM THEORY; SUBSTRATES;

POLY-DEPLETION EFFECTS;

MOS DEVICES;

EID: 0034860182     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Computationally efficient implementation of charge sheet model
2. A physical compact MOSFET model, including quantum mechanical effects for statistical circuit design applications
3. Analytic model for direct tunneling current in polycrystalline silicon-gate-metal-oxide-semiconductor devices