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Volumn 15, Issue 1-2, 2001, Pages 283-285
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Memory effects in MOS capacitors with silicon quantum dots
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Author keywords
Nanocrystal memory; Silicon rich oxide; Single electron memory; SRO
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Indexed keywords
ANNEALING;
CHEMICAL VAPOR DEPOSITION;
HYSTERESIS;
SEMICONDUCTOR QUANTUM DOTS;
SILICON;
SUPERSATURATION;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
MEMORY EFFECTS;
MOS CAPACITORS;
MICROELECTRONICS;
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EID: 0034851359
PISSN: 09284931
EISSN: None
Source Type: Journal
DOI: 10.1016/S0928-4931(01)00220-X Document Type: Article |
Times cited : (3)
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References (4)
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