Effects of annealing on luminescence properties of Si nanocrystallites prepared by pulsed laser ablation in inert gas

Materials Science and Engineering C

Volumn 15, Issue 1-2, 2001, Pages 129-131

  Umezu, I ^a   Yamazaki, G ^a   Yamaguchi, T ^a   Sugimura, A ^a   Makino, T ^b   Yamada, Y ^b   Suzuki, N ^b   Yoshida, T ^b  

^a KONAN UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

Electroluminescence; Laser ablation; Nanocrystal; Photoluminescence; Silicon

Indexed keywords

ANNEALING; ELECTROLUMINESCENCE; HELIUM; PULSED LASER DEPOSITION; SILICON;

EXCITATION PHOTON ENERGY;

NANOSTRUCTURED MATERIALS;

NANOCRYSTAL;

EID: 0034847898     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(01)00248-X     Document Type: Article

References (7)