The ArF lithography - Challenges, resolution capability and the mask error enhancement function (MEEF)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4404, Issue , 2001, Pages 162-169

  Plat, M ^a   Lyons, C ^a   Wilkison, A ^a   Schefske, J ^a   Kim, H E ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; IMAGE ANALYSIS; MASKS; SCANNING; SCANNING ELECTRON MICROSCOPY;

MASK ERROR ENHANCEMENT FUNCTION (MEEF);

LITHOGRAPHY;

EID: 0034846151     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.425202     Document Type: Conference Paper

References (7)

1. Pattern collapse in high aspect ratio DUV- and 193nm resists
2. The impact of mask error on optical lithography
3. The impact of optical enhancement techniques on the mask error enhancement function (MEEF)
4. Can Phase shift save the semiconductor industry
5. Mask error factor: Causes and implications for process latitude
6. Reduction of mask induced CD errors by optical proximity correction