SiO2 films from tetraethoxysilane-based LPCVD: An experimental investigation of the by-product-inhibited deposition mechanism

Journal of the Electrochemical Society

Volumn 146, Issue 9, 1999, Pages 3415-3419

  Schlote, J ^a   Bugiel, E ^a   Arndt, J ^b   Wahl, G ^b  

^a IHP   (Germany)

^b TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BYPRODUCTS; CHEMICAL VAPOR DEPOSITION; ETHANOL; INITIATORS (CHEMICAL); REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICA;

LOW-PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); TETRAETHOXYSILANE;

SEMICONDUCTING FILMS;

EID: 0033362957     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392488     Document Type: Article

References (11)

1. S. B. Desu, J. Am. Ceram. Soc., 72, 1615 (1989).
2. T. Satake, T. Sorita, H. Fujioka, H. Adachi, and H. Nakajima, Jpn. J. Appl. Phys., 33, 3339 (1994).
3. T. Sorita, S. Shiga, K. Ikuta, Y. Egashira, and H. Komiyama, J. Electrochem. Soc., 140, 2952 (1993).
4. M. M. Islam Raja, C. Chang, J. P. McVittie, M. A. Capelli, and K. C. Saraswat, J. Vac. Sci. Technol. B, 11, 720 (1993).
5. J. Schlote, B. Tillack, G. Ritter, and B. Kuck, in The 9th European Conference on CVD, Late News Abstracts, p. 15, Tampere, Finland, Aug 22-27 (1993).
6. J. Schlote, K.-W. Schröder, and K. Drescher, J. Electrochem. Soc., 138, 2393 (1991).
7. C. B. Raupp and T. S. Cale, Mater. Res. Soc. Symp. Proc., 334, 471 (1994).
8. T. S. Cale, Mater. Res. Soc. Symp. Proc., 389, 95 (1995).
9. T. P. Ong, P. Tobin, and T. Mele, J. Appl. Phys., 77, 6055 (1995).
10. E. A. Haupfear, E. C. Olson, and L. P. Schmidt, J. Electrochem. Soc., 141, 1943 (1994).
11. J. Arndt and G. Wahl, in Chemical Vapor Deposition, M. D. Allendorf and C. Bernard, Editors, PV 97-25, p. 147, The Electrochemical Society Proceedings Series, Pennington, NJ (1997).