Computational design and analysis of MOVPE reactors

Journal De Physique. IV : JP

Volumn 11, Issue 3, 2001, Pages

  Pawlowski, R P ^a   Salinger, A G ^a   Romero, L A ^a   Shadid, J N ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; APPROXIMATION THEORY; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; HEAT TRANSFER; METALLORGANIC VAPOR PHASE EPITAXY; THIN FILMS;

ROTATING DISK REACTORS (RDR);

CHEMICAL REACTORS;

EID: 0034842097     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp4:2001325     Document Type: Conference Paper

References (19)

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3. Materials update, MOCVD technology for semiconductors
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5. Detailed models of the MOVPE process
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7. On multiple stability of mixed convection flows in a chemical vapor deposition reactor
8. Transport phenomena in vertical reactors for metalorganic vapor phase epitaxy I. Effects of heat transfer characteristics, reactor geometry, and operating conditions
9. Efficient parallel computation of unstructured finite element reacting flow solutions
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11. Numerical solution of bifurcation and nonlinear eigenvalue problems
12. Forced flow near a heated rotating disk: A similarity solution