End-point detection during the realisation of deep P+ zones by Al thermomigration

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4405, Issue , 2001, Pages 77-82

  Dilhac, J M ^a   Morillon, B ^a   Ganibal, C ^a   Anceau, C ^a  

^a LAAS CNRS   (France)

Author keywords

Deep doping; End point detection; Junction insulation; Power device; Thermomigration

Indexed keywords

LASER APPLICATIONS; POWER ELECTRONICS; PROCESS CONTROL; REFLECTOMETERS; SEMICONDUCTOR DOPING; SILICON ALLOYS;

THERMOMIGRATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0034839218     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.425241     Document Type: Article

References (5)