SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 39, Issue 7, 1996, Pages 965-970

pn-junctions in silicon with blocking capabilities beyond 2.5 kV produced by rapid thermal processing

(3) Nagel, D a Kuhlmann, U a Sittig, R a

a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; CHARGE CARRIERS; DIFFUSION; EUTECTICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SURFACES;

EPITAXIAL REGROWTH; INDUCED DEFECTS; POWER SEMICONDUCTOR DEVICES; RAPID THERMAL PROCESSING;

SEMICONDUCTOR JUNCTIONS;

EID: 0030193507 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(96)00001-9 Document Type: Review

Times cited : (5)

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