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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 A, 1997, Pages 7140-7145

P and As implantation enhanced formation of metal-free oxide on WSi2

(5) Lee, Jae Gab a Kim, Ji Young a Lee, Jeong Yong b Roh, Jae Sung c Huh, Jeung Soo d

a Kookmin University (South Korea)

b Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

c Hynix Semiconductor Inc (South Korea)

d Kyungpook National University (South Korea)

Author keywords

Metal free oxide; Oxidation; P (or As) implantation; WSi2

Indexed keywords

AMORPHOUS SILICON; ARSENIC; AUGER ELECTRON SPECTROSCOPY; CHEMICAL CLEANING; CRYSTALLINE MATERIALS; DECOMPOSITION; ETCHING; ION IMPLANTATION; OXIDATION; PHOSPHORUS; TRANSMISSION ELECTRON MICROSCOPY;

BUFFERED OXIDE ETCHANT; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; METAL FREE OXIDE; TUNGSTEN DISILICIDE;

SILICON WAFERS;

EID: 0031354478 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.7140 Document Type: Article

Times cited : (5)

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