Monitoring thickness changes in GaAs/AlAs partial VCSEL Bragg reflector stacks using optical spectroscopic, x-ray and electron microscopic methods

Semiconductor Science and Technology

Volumn 16, Issue 2, 2001, Pages 107-117

  Thomas, P J S ^a   Hosea, T J C ^a   Lancefield, D ^a   Meidia, H ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; MIRRORS; OPTICAL MULTILAYERS; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BRAGG REFLECTOR; VERTICAL CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0034831760     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/2/309     Document Type: Article

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