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Journal of Crystal Growth

Volumn 223, Issue 3, 2001, Pages 369-375

ALE growth and optical characterization of ZnSe/ZnS strained quantum well structures on Si substrate

(2) Yokoyama, Meiso a Chen, Nyen Ts b

a I SHOU UNIVERSITY (Taiwan)

b Department of Plant Industry (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; HETEROJUNCTIONS; HYDROGEN SULFIDE; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ATOMIC LAYER EPITAXY (ALE); STRAINED MULTIPLE QUANTUM WELLS (SMQW); STRAINED SINGLE QUANTUM WELLS (SSQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034831508 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)01004-6 Document Type: Article

Times cited : (19)

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