Effect of atomic layer epitaxy growth conditions on the properties of ZnS epilayers on (100)-Si substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 10, 1996, Pages 5416-5420

  Liu, Chun Hsing ^a   Yokoyama, Meiso ^a   Su, Yan Kuin ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

ALE; MOCVD; Monolayer; Morphology; Photoluminescence

Indexed keywords

ATOMIC LAYER EPITAXY; DIMETHYLZINC; MOLE FLOW RATE;

ATOMS; HYDROGEN SULFIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; MORPHOLOGY; PHOTOLUMINESCENCE; SILICON; SUBSTRATES; SURFACE PROPERTIES; ZINC SULFIDE;

EPITAXIAL GROWTH;

EID: 0030259445     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5416     Document Type: Article

References (26)

1. S. Fujita, H. Mimoto, H. Takabe and T. Nogucchi: J. Cryst. Growth 47 (1979) 326.
2. H. Katayama, S. Oda and H. Kukimoto: Appl. Phys. Lett. 27 (1975) 697.
3. M. Yamaguchi, A. Yamamoto and K. Kondo: J. Appl. Phys. 48 (1977) 196.
4. S. Oda and H. Kukimoto: IEEE. Trans. Electron Devices 24 (1977) 956.
5. M. Ymaguchi and A. Yamamoto: Jpn. J. Appl. Phys. 16 (1977) 77.
6. R. M. Park and N. M. Salansky: Appl. Phys. Lett. 44 (1984) 249.
7. K. Yoneda, T. Toda, Y. Hishida and T. Niina: J. Cryst. Growth 67 (1984) 125.
8. M. Yokoyama and S. Ohta: J. Appl. Phys. 59 (1986) 3919.
9. M. Yokoyama, K. Kashiro and S. Ohta: Appl. Phys. Lett. 49 (1986) 411.
10. A. Yoshikawa, K. Tanada and H. Kassi: Jpn. J. Appl. Phys. 23 (1984) L773.
11. H. Matsuhashi, I. Mitsushi, M. Mizuta and H. Kukimoto: Jpn. J. Appl. Phys. 24 (1985) L578.
12. S. Takata, T. Minami, T. Miyata and H. Nanto: J. Cryst. Growth 86 (1989) 257.
13. T. Yodo, K. Ueda, K. Morio, K. Yamashi and S. Tanaka: J. Appl. Phys. 68 (1990) 5674.
14. Y. Wu, T. Toyoda, Y. Kawakami, S. Fujita and S. Fujita: Jpn. J. Appl. Phys. 29 (1990) L727.
15. S. Yamaga and A. Yoshikawa: J. Cryst. Growth 117 (1992) 152.
16. T. Tadokoro, S. Ohta, T. Ishiguro, Y. Ichinose, S. Kobayashi and N. Yamamoto: J. Cryst. Growth 148 (1995) 223.
17. T. Yao and T. Takeda: Appl. Phys. Lett. 48 (1986) 160.
18. A. Koukitu, A. Saegusa, M. Kitho, H. Ikeda and H. Seki: Jpn. J. Appl. Phys. 29 (1990) L2165.
19. A. Yoshikawa, T. Okamoto, H. Yasuda, S. Yamaga and H. Kasai: J. Cryst. Growth 101 (1990) 86.
20. N. Shibata and A. Katsui: J. Cryst. Growth 101 (1990) 91.
21. C. D. Lee, B. H. Lim, C. Lim, H. L. Park, C. H. Chung and S. K. Chang: J. Cryst, Growth 117 (1992) 148.
22. I. Bhat and S. Akram: J. Cryst. Growth 138 (1994) 127.
23. C. D. Lee, B. K. Kim, J. W. Kim, S. K. Chang and S. H. Suh: J. Appl. Phys. 76 (1994) 928.
24. W. Faschinger and H. Sitter: J. Cryst. Growth 99 (1990) 566.
25. N. Kobayashi and Y. Horikoshi: Jpn. J. Appl. Phys. 29 (1990) L236.
26. Y. Takemura, H. Nakanishi and M. Konagai: Jpn. J. Appl. Phys. 30 (1990) L246.