Measurement of the response characteristics around K absorption edges of dead-layer materials of a charge-coupled device

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 459, Issue 1-2, 2001, Pages 191-199

  Mori, K ^a   Shouho, M ^a   Katayama, H ^a   Kitamoto, S ^a,d   Tsunemi, H ^a,d   Hayashida, K ^a,d   Miyata, E ^a,d   Ohta, M ^a   Kohmura, T ^a   Koyama, K ^b,d   Bautz, M W ^c   Foster, R ^c   Kissel, S ^c  

^a OSAKA UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; ELECTROMAGNETIC WAVE ABSORPTION; GAS ADSORPTION; NITROGEN; OXYGEN; SILICA; SILICON; SILICON NITRIDE; X RAY SPECTROMETERS;

X RAY ADSORPTION FINE STRUCTURE (XAFS);

PARTICLE DETECTORS;

EID: 0034831266     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(00)00944-X     Document Type: Article

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