Characteristics and utilization of a new class of low on-resistance MOS-gated power device

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 2, Issue , 1999, Pages 1073-1079

  Lai, J S ^a   Song, B M ^a   Zhou, R ^a   Hefner Jr , A R ^a   Berning, D W ^a   Shen, C C ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GATES (TRANSISTOR); MOS DEVICES; MOSFET DEVICES;

GATE DRIVE RESISTANCE EFFECT; INSULATED GATE BIPOLAR TRANSISTOR; OUTPUT CAPACITANCE; SWITCHING VOLTAGE; TURN-OFF DELAY;

POWER ELECTRONICS;

EID: 0033315397     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)