Controlling base-SiO2 density of low-leakage 1.6 nm gate-SiON for high-performance and highly reliable n/pFETs

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 81-82

  Togo, M ^a   Watanabe, K ^a   Terai, M ^a   Kimura, S ^a   Morioka, A ^a   Yamamoto, T ^a   Tatsumi, T ^a   Mogami, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITROGEN; SURFACE REACTIONS; ULTRATHIN FILMS;

GATE LEAKAGE CURRENTS; SURFACE NITRIDATION;

SILICA;

EID: 0034784918     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)