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Volumn 4283, Issue , 2001, Pages 398-405

Theoretical analysis of polarization sensitivity of strained bulk SOAs

Author keywords

Gain; K.p; Polarization sensitivity; Semiconductor optical amplifier; Strain

Indexed keywords

BANDWIDTH; CHARGE CARRIERS; GAIN MEASUREMENT; OPTIMIZATION; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES; STRAIN; TENSILE STRENGTH;

EID: 0034774577     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.432589     Document Type: Conference Paper
Times cited : (7)

References (13)
  • 10
  • 11
    • 0001199458 scopus 로고
    • Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells
    • (1992) Phys. Rev. B , vol.46 , pp. 4110-4116
    • Chao, C.Y.1    Chuang, S.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.