|
|
Volumn 272, Issue 4, 2000, Pages 264-270
|
|
Ab initio calculation of the reflectance anisotropy of GaAs(110): The role of nonlocal polarizability and local fields
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ANISOTROPY;
GALLIUM ARSENIDE;
III-V SEMICONDUCTORS;
QUANTUM THEORY;
REFLECTION;
SEMICONDUCTING GALLIUM;
AB INITIO;
AB INITIO CALCULATIONS;
LOCAL FIELDS;
NONLOCALITIES;
OPTICAL REFLECTANCE;
POLARIZABILITIES;
QUANTUM MECHANICAL;
REAL-SPACE;
CALCULATIONS;
ANISOTROPY;
ARTICLE;
CALCULATION;
DIPOLE;
DYNAMICS;
MATHEMATICAL ANALYSIS;
MATHEMATICAL MODEL;
POLARIZATION;
QUANTUM MECHANICS;
SURFACE PROPERTY;
|
|
EID: 0034738352
PISSN: 03759601
EISSN: None
Source Type: Journal
DOI: 10.1016/S0375-9601(00)00427-8 Document Type: Article |
|
Times cited : (14)
|
|
References (19)
|
