Novel Cd(Se,Te)/BeTe nanostructures: Fabrication by molecular beam epitaxy and properties

Proceedings of the 8th International Symposium Nanostructures: Physics and Technology

Volumn , Issue , 2000, Pages 98-101

  Ivanov, S V ^a   Reuscher, G ^b   Gruber, T ^b   Muck, T ^b   Wagner, V ^b   Geurts, J ^b   Waag, A ^b   Landwehr, G ^a   Shubina, T V ^a   Sadchikov, N A ^a   Toropov, A A ^a   Kop'ev, P S ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM COMPOUNDS; CADMIUM COMPOUNDS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

SPECULAR SPOT INTENSITY (SSI);

NANOSTRUCTURED MATERIALS;

EID: 0034594264     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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7. R. N. Kyutt, et al., Appl. Phys. Lett. 75, 373 (1999).
8. Th. Walter, et al., Microscopy of Semiconducting Materials, UK: IOP, Oxford, p 315, 1997.