Optical lithography aims for 157 nm

Photonics Spectra

Volumn 34, Issue 12, 2000, Pages 74-79

  Anberg, Doug ^a   Flack, Warren ^a  

^a Ultratech Stepper Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL PROXIMITY CORRECTION;

FUSED SILICA; LASER DAMAGE; LIGHT TRANSMISSION; PHASE SHIFT; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE MANUFACTURE;

PHOTORESISTS;

EID: 0034588558     PISSN: 07311230     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (9)

1. The International Technology Roadmap for Semiconductors (1999). Lithography Exposure Tool Potential Solutions. International Sematech, p. 154.
2. 2 lasers for DUV microlithography. Optical Microlithography XII Proceedings, SPIE 2679.
3. U. Stamm et al (1999). Excimer lasers for 157-nm lithography. Emerging Lithographic Technologies III Proceedings, SPIE 3676.
4. G. Dao and Y. Borodovsky (2000). 157-nm lithography for 100-nm generation and beyond: progress and status. Photomask Technology Technical Program, BACUS 4186-29.
5. R.R. Kunz et al (March 1999). Outlook for 157-nm resist design. Advances in Resist Technology and Processing XVI Proceedings, SPIE 3678, pp. 13-23.
6. B.W. Smith et al (1999). Masking materials for 157-nm lithography. 19th Annual Symposium on Photomask Technology Proceedings, SPIE 3873.
7. Hiroki Jinbo et al (1999). Dry & F doped fused silica for photomask substrate in 157-nm lithography. 19th Annual Symposium on Photomask Technology Proceedings, SPIE 3873.
8. C. Smith and L. More (May 1999). 157 Lithography Data Review. Lincoln Laboratories.
9. M. Rothschild (December 1999). Next-Generation Lithography Workshop.