Masking materials for 157 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3873, Issue pt 1, 1999, Pages 412-420

  Smith, B W ^a   Bourov, A ^a   Lassiter, M ^a   Cangemi, M ^a  

^a ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; AMORPHOUS SILICON; CHROMIUM; COMPOSITION; ELLIPSOMETRY; MODIFICATION; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOLITHOGRAPHY; THERMODYNAMIC PROPERTIES; THIN FILMS; TUNGSTEN;

ATTENUATED PHASE SHIFT MASKING FILMS; BINARY MASKING FILMS; CHROME ABSORBER; PHOTOMASK; SPECTROSCOPIC ELLIPSOMETRY; THERMOMECHANICAL PROPERTIES;

MASKS;

EID: 0033326135     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.373337     Document Type: Conference Paper

References (0)