Bulk oxide charge and slow states in Si-SiO2 structures generated by RIE-mode plasma

Microelectronics Reliability

Volumn 40, Issue 12, 2000, Pages 2033-2037

  Paskaleva, A ^a   Atanassova, E ^a  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ION BOMBARDMENT; LEAKAGE CURRENTS; OPTICAL CORRELATION; PLASMA APPLICATIONS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SILICA;

LINEAR CORRELATIONS;

MICROELECTRONICS;

EID: 0034561561     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00337-6     Document Type: Article

References (6)

1. Gabriel CT. Gate oxide damage from polysilicon etching. J Vac Sei Technol B 1991;9:370-3.
2. Hoff AM, Esry TC, Nauka K. Monitoring plasma damage: a real time, non-contact approach. Solid St Technol 1996;39:139-50.
3. 2 on Si after RIE-like nitrogen plasma action. Appl Surf Sci 1997;120:306-16.
4. Fleetwood DM, Shaneyfelt MR, Warren WL, Schwank JR, Meisenheimer TL, Winokur PS. Border traps: issues for MOS radiation response and long-term reliability. Microelectron Reliab 1995;35:403-28.
5. 2 inversion channel. Solid St Electron 1992;35:1621-7.
6. Dumin DJ, Maddux JR, Scott RS, Subramonian R. A model relating wearout to breakdown in thin oxides. IEEE Trans El Dev 1994;ED-41:1570-9.