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Applied Physics A: Materials Science and Processing

Volumn 71, Issue 6, 2000, Pages 609-614

Electron trapping center and SnO2-doping mechanism of indium tin oxide

(4) Omata, T a Fujiwara, H a Otsuka Yao Matsuo, S a Ono, N b

a OSAKA UNIVERSITY (Japan)

b MITSUI MINING AND SMELTING CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; DENSITY (SPECIFIC GRAVITY); ELECTRON TRAPS; ERBIUM; LATTICE CONSTANTS; LIGHT ABSORPTION; NEGATIVE IONS; OXYGEN; POWDERS; SEMICONDUCTOR DOPING; TIN COMPOUNDS;

COORDINATION NUMBER; INDIUM TIN OXIDE; OPTICAL ABSORPTION SPECTROSCOPY;

INDIUM COMPOUNDS;

EID: 0034517318 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390000567 Document Type: Article

Times cited : (20)

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