GaAs buried growth over tungsten stripe using TEG and TMG

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 212-219

  Arai, T ^a   Tobita, H ^a   Miyamoto, Y ^a   Furuya, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; METALLORGANIC VAPOR PHASE EPITAXY; TUNGSTEN;

BURIED GROWTH; TUNGSTEN STRIPES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034510682     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00688-6     Document Type: Article

References (7)

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2. T. Arai, Y. Harada, S. Yamagami, Y. Miyamoto, K. Furuya, IEEE 12th International Conference on Indium Phosphide and Related Materials (IPRM00), TuB1.6, May 2000, Williamsburg, VA, USA.
3. Machida N., Hansson B., Furuya K., Wernersson L.-E., Samuelson L. Jpn. J. Appl. Phys. 37:1998;4311.
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6. T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto, K. Furuya, International Conference on Modulated Semiconductor Structures (MSS9), D21, July 1999, Fukuoka, Japan.
7. T. Arai, H. Tobita, Y. Harada, M. Suhara, Y. Miyamoto, K. Furuya, IEEE 11th International Conference on Indium Phosphide and Related Materials (IPRM99), TuA1-4, May 1999, Davos, Switzerland.