High-resolution measurement of crack growth in micro-machined single crystal silicon

Materials Research Society Symposium - Proceedings

Volumn 605, Issue , 2000, Pages 43-48

  Fitzgerald, A M ^a   Dauskardt, R H ^b   Kenny, T W ^c  

^a Department of Aeronautics and Astronautics Department of Mechanical Engineering and Industrial for Computational and Mathematical Engineering   (United States)

^b Stanford University   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BRITTLE MATERIALS; CRACK VELOCITY;

BRITTLENESS; CANTILEVER BEAMS; COMPRESSION TESTING; CRACK PROPAGATION; CURVE FITTING; LITHOGRAPHY; SINGLE CRYSTALS; STRESS CORROSION CRACKING; STRESS INTENSITY FACTORS; VELOCITY MEASUREMENT;

SILICON WAFERS;

EID: 0034508265     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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6. A.M. Fitzgerald, R.H. Dauskardt, T.W. Kenny, Sensors and Actuators: A, 83 (1-3), p.194, (2000).
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8. K. Ravi-Chandar, Int. J. of Fract., 90, p. 83, (1998).