Resonant states in strained semiconductors

Physica Status Solidi (B) Basic Research

Volumn 210, Issue 2, 1998, Pages 873-877

  Odnoblyudov, M A ^a   Chistyakov, V M ^a   Yassievich, I N ^a   Kagan, M S ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032262277     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199812)210:2<873::AID-PSSB873>3.0.CO;2-5     Document Type: Article

References (9)

1. I. V. ALTUKHOV, M. S. KAGAN, K. A. KOROLEV, V. P. SINIS, and F. A. SMIRNOV, J. Exper. Theor. Phys. 74, 404 (1992).
2. I. V. ALTUKHOV, E. G. CHIRKOVA, M. S. KAGAN, K. A. KOROLEV, V. P. SINIS, and I. N. YASSIEVICH, phys. stat. sol. (b) 198, 35 (1996).
3. G. L. BIR and G. E. PIKUS, Symmetry and Strain-Induced Effects in Semiconductors, Wiley, New York 1974.
4. I. N. YASSIEVICH, K. SCHMALZ, M. A. ODNOBLYUDOV, and M. S. KAGAN, Solid State Electronics 40, 97 (1996).
5. M. A. ODNOBLYUDOV, A. A. PAKHOMOV, V. M. CHISTYAKOV, and I. N. YASSIEVICH, Semiconductors 31, 1014 (1997).
6. J. M. LUTTINGER and W. KOHN, Phys. Rev. 98, 915 (1955).
7. M. A. ODNOBLYUDOV and V. M. CHISTYAKOV, Semiconductors 32 (1997), in press.
8. P. A. M. DIRAC, Principles of Quantum Mechanics, Clarendon Press, Oxford 1930.
9. U. FANO, Phys. Rev. 124, 1866 (1961).