-
1
-
-
84984049094
-
An atmospheric scanning electron microscope
-
Danilatos G.D. An atmospheric scanning electron microscope. Scanning. 3:1980;215.
-
(1980)
Scanning
, vol.3
, pp. 215
-
-
Danilatos, G.D.1
-
2
-
-
0002748490
-
Theory of the gaseous detector device in the ESEM
-
Danilatos G.D. Theory of the gaseous detector device in the ESEM. Adv. Electron. Electron Phys. 78(1):1990.
-
(1990)
Adv. Electron. Electron Phys.
, vol.78
, Issue.1
-
-
Danilatos, G.D.1
-
3
-
-
0343947891
-
Field emitting structures intended for miniature X-ray source
-
Rangsten P., Ribbing C., Strandman C., Hollman P., Hjort K., Bäcklund Y., Lundquvist H., Smith L. Field emitting structures intended for miniature X-ray source. Proc. Transducers '99, Sendai. 1999.
-
(1999)
Proc. Transducers '99, Sendai
-
-
Rangsten, P.1
Ribbing, C.2
Strandman, C.3
Hollman, P.4
Hjort, K.5
Bäcklund, Y.6
Lundquvist, H.7
Smith, L.8
-
4
-
-
0343075976
-
Atmospheric electron X-ray spectrometer
-
Feldman J., Wilcox J.Z., George T., Barsic D.N., Doll T., Scherer A. Atmospheric electron X-ray spectrometer. Am. Vac. Soc. 46th Symposium, Oct. 1999, Seattle, WA:1999.
-
(1999)
Am. Vac. Soc. 46th Symposium, Oct. 1999, Seattle, WA
-
-
Feldman, J.1
Wilcox, J.Z.2
George, T.3
Barsic, D.N.4
Doll, T.5
Scherer, A.6
-
6
-
-
36849104521
-
Calculated elastic constants for stress problems associated with semiconductor devices
-
Brantly W.A. Calculated elastic constants for stress problems associated with semiconductor devices. J. Appl. Phys. 44:1973;534.
-
(1973)
J. Appl. Phys.
, vol.44
, pp. 534
-
-
Brantly, W.A.1
-
7
-
-
0342641871
-
Progress of electron microscopy of wet specimens using film sealed environmental celles: Its serious problems for biological materials
-
Fukami A., Murakami S. Progress of electron microscopy of wet specimens using film sealed environmental celles: its serious problems for biological materials. J. Electron Microsc. 28 (S):1979;41.
-
(1979)
J. Electron Microsc.
, vol.28
, pp. 41
-
-
Fukami, A.1
Murakami, S.2
-
8
-
-
36849114629
-
A closed wet cell for the electron microscope
-
Fullam E.F. A closed wet cell for the electron microscope. Rev. Sci. Instr. 42:1972;245.
-
(1972)
Rev. Sci. Instr.
, vol.42
, pp. 245
-
-
Fullam, E.F.1
-
10
-
-
0012629953
-
Atmospheric scanning electron microscopy using silicon nitride thin film windows
-
Green E.D., Kino G.S. Atmospheric scanning electron microscopy using silicon nitride thin film windows. J. Vac. Sci. Technol., B. 9(3):1991;1557.
-
(1991)
J. Vac. Sci. Technol., B
, vol.9
, Issue.3
, pp. 1557
-
-
Green, E.D.1
Kino, G.S.2
-
12
-
-
0042360669
-
An improved boron nitride technology for synchrotron X-ray masks
-
Levy R. An improved boron nitride technology for synchrotron X-ray masks. J. Vac. Sci. Technol., B. 6:1988;154.
-
(1988)
J. Vac. Sci. Technol., B
, vol.6
, pp. 154
-
-
Levy, R.1
-
15
-
-
0031211523
-
Diamond/SiC double layer membrane for X-ray mask
-
Noguchi H., Kubota Y., Takarada T. Diamond/SiC double layer membrane for X-ray mask. J. Electrochem. Soc. 144(8):1997;2909.
-
(1997)
J. Electrochem. Soc.
, vol.144
, Issue.8
, pp. 2909
-
-
Noguchi, H.1
Kubota, Y.2
Takarada, T.3
-
16
-
-
84975391144
-
Structural features of oxide coatings on aluminum
-
Keller F., Hunter M.S., Robinson D.L. Structural features of oxide coatings on aluminum. J. Electrochem. Soc. 100(9):1953;411-419.
-
(1953)
J. Electrochem. Soc.
, vol.100
, Issue.9
, pp. 411-419
-
-
Keller, F.1
Hunter, M.S.2
Robinson, D.L.3
-
17
-
-
0000662036
-
A study of pore structures on anodized aluminum
-
Renshaw T.A. A study of pore structures on anodized aluminum. J. Electrochem. Soc. 108(2):1961;185-191.
-
(1961)
J. Electrochem. Soc.
, vol.108
, Issue.2
, pp. 185-191
-
-
Renshaw, T.A.1
-
18
-
-
0001093743
-
Electrochemical kinetic study on the growth of porous anodic oxide films on aluminum
-
Patermarakis G., Moussoutzanis K. Electrochemical kinetic study on the growth of porous anodic oxide films on aluminum. Electrochim. Acta. 40(6):1995;699-708.
-
(1995)
Electrochim. Acta
, vol.40
, Issue.6
, pp. 699-708
-
-
Patermarakis, G.1
Moussoutzanis, K.2
-
19
-
-
85031522132
-
-
Anopore™ by Whatman, plc.
-
Anopore™ by Whatman, plc.
-
-
-
-
20
-
-
0033354299
-
Photonic band gap formation and tunability in certain self-organizing systems
-
John S., Busch K. Photonic band gap formation and tunability in certain self-organizing systems. IEEE J. Lightwood Technol. 11/99:1999.
-
(1999)
IEEE J. Lightwood Technol.
, vol.1199
-
-
John, S.1
Busch, K.2
-
21
-
-
0001664484
-
Preparation and photoluminescence of alumina membranes with ordered pore arrays
-
Du Y., Cai W.L., Mo C.M., Chen J., Zhang L.D., Zhu X.G. Preparation and photoluminescence of alumina membranes with ordered pore arrays. Appl. Phys. Lett. 74(20):1999;2951.
-
(1999)
Appl. Phys. Lett.
, vol.74
, Issue.20
, pp. 2951
-
-
Du, Y.1
Cai, W.L.2
Mo, C.M.3
Chen, J.4
Zhang, L.D.5
Zhu, X.G.6
-
22
-
-
0000684647
-
Highly ordered nanochannel-array in anodic alumina
-
Masuda H., Yamada H., Satoh M., Asoh H., Nakano M., Tamamura T. Highly ordered nanochannel-array in anodic alumina. Appl. Phys. Lett. 71(19):1997;2770.
-
(1997)
Appl. Phys. Lett.
, vol.71
, Issue.19
, pp. 2770
-
-
Masuda, H.1
Yamada, H.2
Satoh, M.3
Asoh, H.4
Nakano, M.5
Tamamura, T.6
-
24
-
-
0000848295
-
Hexagonal pore arrays with a 50-420 nm interpore distance formed by self-organization in anodic alumina
-
Li A.P., Müller F., Birner A., Nielsch K., Gösele U. Hexagonal pore arrays with a 50-420 nm interpore distance formed by self-organization in anodic alumina. J. Appl. Phys. 84(11):1998;6023.
-
(1998)
J. Appl. Phys.
, vol.84
, Issue.11
, pp. 6023
-
-
Li, A.P.1
Müller, F.2
Birner, A.3
Nielsch, K.4
Gösele, U.5
-
26
-
-
0343512127
-
Intrinsic stress of PECVD silicon oxynitride films deposited in a hot-wall reactor
-
Aite K., Koekoek R. Intrinsic stress of PECVD silicon oxynitride films deposited in a hot-wall reactor. Mater. Res. Symp. Proc. 188:1990;85.
-
(1990)
Mater. Res. Symp. Proc.
, vol.188
, pp. 85
-
-
Aite, K.1
Koekoek, R.2
-
28
-
-
0031060760
-
Optimization of low-stress silicon nitride process for surface-micromachining applications
-
French P.J., Sarro P.M., Mallee R., Fakkeldij E.J.M., Wolfenbuettel R.F. Optimization of low-stress silicon nitride process for surface-micromachining applications. Sens. Actuators, A. 58:1997;149.
-
(1997)
Sens. Actuators, A
, vol.58
, pp. 149
-
-
French, P.J.1
Sarro, P.M.2
Mallee, R.3
Fakkeldij, E.J.M.4
Wolfenbuettel, R.F.5
-
29
-
-
0032022992
-
Chemically vapor-deposited silicon carbide films for surface protection
-
Hoerner A., Vierhaus J., Burte E.P. Chemically vapor-deposited silicon carbide films for surface protection. Surf. Coat. Technol. 100-101:1998;149.
-
(1998)
Surf. Coat. Technol.
, vol.100-101
, pp. 149
-
-
Hoerner, A.1
Vierhaus, J.2
Burte, E.P.3
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